050-7007 rev c 7-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com to-247 d 3 pak bll sll apt20m36bll apt20m36sll 200v 65a 0.036 ?? ?? ? power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg to-247 or surface mount d 3 pak package power mos 7 r mosfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 32.5a) zero gate voltage drain current (v ds = 200v, v gs = 0v) zero gate voltage drain current (v ds = 160v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 200 0.036 100500 100 35 apt20m36bll_sll 200 65 260 3040 329 2.63 -55 to 150 300 6530 1300 downloaded from: http:///
dynamic characteristics apt20m36bll_sll 050-7007 rev c 7-2004 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.400.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 source-drain diode ratings and characteristics thermal characteristics symbol r jc r ja min typ max 0.38 40 unitc/w characteristicjunction to case junction to ambient symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 100v i d = 65a @ 25c resistive switching v gs = 15v v dd = 100v i d = 65a @ 25c r g = 1.6 ? inductive switching @ 25c v dd = 133v, v gs = 15v i d = 65a, r g = 5 ? inductive switching @ 125c v dd = 133v v gs = 15v i d = 65a, r g = 5 ? min typ max 3080 990 7060 24 26 9 3716 30 490300 600 315 unit pf nc ns j 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 0.62mh, r g = 25 ? , peak i l = 65a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 65a di / dt 700a/s v r 200v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and inforation contained herein. characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -65 a ) reverse recovery time (i s = -65 a , dl s /dt = 100a/s) reverse recovery charge (i s = -65 a , dl s /dt = 100a/s) peak diode recovery dv / dt 6 unit amps volts ns c v/ns min typ max 65 260 1.3 280 3.5 5 symbol i s i sm v sd t rr q rr dv / dt downloaded from: http:///
050-7007 rev c 7-2004 typical performance curves apt20m36bll_sll r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 2 4 6 8 10 0 20 40 60 80 100 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 200160 120 8040 0 1.41.3 1.2 1.1 1.0 0.9 0.8 1.151.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 140120 100 8060 40 20 0 7060 50 40 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle 6v v gs =10v v gs =20v t j = +25c t j = -55c 7v 6.5v 7.5v 9v v gs =15v 8v t j = +125c 10v v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature i d = 32.5a v gs = 10v normalized to v gs = 10v @ i d = 32.5a 0.03290.158 0.189 0.00334f0.00802f 0.165f power (watts) junctiontemp. ( c) rc model case temperature. ( c) downloaded from: http:///
050-7007 rev c 7-2004 apt20m36bll_sll v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 200 0 10 20 30 40 50 0 50 100 150 200 250 300 0.3 0.5 0.7 0.9 1.1 1.3 1.5 t c =+25c t j =+150c single pulse 260100 5010 51 1614 12 10 86 4 2 0 i d = 65a 10,000 5,0001,000 500100 5010 200100 5010 51 operation here limited by r ds (on) c rss c oss c iss 10ms 100s 1ms v ds =100v v ds =40v v ds =160v t j =+150c t j =+25c i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 133v r g = 5 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 133v r g = 5 ? t j = 125c l = 100h 30 40 50 60 70 80 90 100 30 40 50 60 70 80 90 100 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 45 50 4540 35 30 25 20 15 10 50 12001000 800600 400 200 0 120100 8060 40 20 0 1000 800600 400 200 0 v dd = 133v i d = 65a t j = 125c l = 100h e on includes diode reverse recovery. v dd = 133v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. downloaded from: http:///
050-7007 rev c 7-2004 typical performance curves apt20m36bll_sll 15.49 (.610)16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. figure 19, turn-off switching waveforms and definitions figure 18, turn-on switching waveforms and definitions drain current drain voltage gate voltage t j 125c 10% 0 t d(off) t f switching energy 90% 90% drain current drain voltage gate voltage t j 125c switching energy 10% t d(on) 90% 5% t r 5% 10% i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt60ds30 downloaded from: http:///
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